Semiconductor laser

Details Semiconductor laser Semiconductor laser

1980-09-02

1983-05-10

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 357 61, H01S 319

Patent

active

043833195

ABSTRACT:
In a laser comprising a GaAs substrate, an active layer of GaAlAs put between a first and a second clad layers, a buffer layer is disposed between said first clad layer and said substrate, and thermal expansion coefficient of the buffer layer is selected smaller than that of said active layer; thereby an internal stress of the active layer is released and lifetime of the laser is very much prolonged.

REFERENCES:
Salathe et al., "Laser Diodes with Stripe Geometry Contacts Produced by Laser Alloying", 1979 IEEE/OSA Conference on Laser Engineering and Applications, Jun. 1979, pp. 47-48.
Salathe et al., "Laser-Alloyed Stripe-Geometry DH Lasers", App. Phys. Lett. 35 (6), 15 Sep. 1979, pp. 439-440.
Shima et al., "Improvement of Photoluminescence Property of (GaAl)As double-Heterostructure Laser with Buffer Layer", App. Phys. Lett., vol. 36, No. 6, Mar. 1980 pp. 395-397.

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