GaAs layers as contacts to thin film semiconductor layers

Details GaAs layers as contacts to thin film semiconductor layers GaAs layers as contacts to thin film semiconductor layers

1976-11-16

1978-02-14

Miller, Jr., Stanley D.

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

136 89CC, 136 89TF, 148 334, 357 16, 357 30, 357 65, H01L 2348

Patent

active

040743055

ABSTRACT:
Electrical contact between a conducting substrate, e.g., graphite, and a polycrystalline semiconductor layer of, for example p-type indium phosphide in a semiconductor device is made through a p-type GaAs intermediary layer. The GaAs layer is deposited on the conducting substrate by conventional methods such as chemical vapor deposition. The indium phosphide layer can then be deposited on the GaAs by similar techniques. The specific resistance and blocking voltage of such an interface is typically below 2 .OMEGA.-cm.sup.2 and 50 millivolts respectively. The efficiency of a p-InP
CdS solar cell containing the improved electrical contact is measurably increased.

REFERENCES:
patent: 3802967 (1974-04-01), Ladany et al.
patent: 3914785 (1975-10-01), Ketchow
Y. Nakayama et al., "Submicron GaAs Epitaxial Layer from Diethylgalliumchloride and Arsine", J. Electrochem. Soc. Aug. 1976, pp. 1227-1231.
H. M. Manasevit et al., "The Use of Metal-Organics in the Preparation of Semiconductor Materials" J. Electrochem. Soc.: Solid State Science, Dec. 1969, pp. 1725-1732.
K. J. Bachmann et al., "Polycrystalline Thin Film InP/CdS solar Cell", Applied Physics Letters, vol. 29, No. 2, 15 Jul. 1976 pp. 121-123.
W. D. Johnston, Jr. et al., "Growth and Characterization of VPE Thin Film AlAs-GaAs Heterojunction layers", Conference Abstract for 6th Int. Symp. N. Amer. Conf. On GaAs & Related Compounds, Sept. 1976, p. 29.

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