1976-01-20
1978-02-14
Miller, Jr., Stanley D.
357 20, 357 86, H01L 2900
Patent
active
040743039
ABSTRACT:
A semiconductor rectifier device including an inner layer of semiconductor material of a first conductivity type and an outer layer of first conductivity type but having a higher doping concentration than the inner layer with the outer layer formed with a plurality of islands of opposite conductivity type which do not extend completely through the outer layer so as to provide a semiconductor rectifier device which has greatly improved resistance to high voltage breakdown particularly in the reverse direction.
REFERENCES:
patent: 2971139 (1961-02-01), Noyce
patent: 3249831 (1966-05-01), New et al.
patent: 3331000 (1967-07-01), Moyson et al.
patent: 3476992 (1969-11-01), Chu
patent: 3599061 (1971-08-01), Kokosa
patent: 3914782 (1975-10-01), Nakata
D. Carley et al., "The Overlay Trans., Pt. I: New Geom. Boosts Power," Electronics, Aug. 23, 1965, pp. 71-77.
Benda Hansjochen
Huber Peter
Clawson Jr. Joseph E.
Miller, Jr. Stanley D.
Siemens Aktiengesellschaft
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