Rapid pumpdown for high vacuum processing

Details Rapid pumpdown for high vacuum processing Rapid pumpdown for high vacuum processing

1983-08-08

1984-10-02

Howell, Janice A.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250397, 2504411, 2504431, H01J 502, H01J 716, H01J 726

Patent

active

044750455

ABSTRACT:
Articles for irradiation are introduced from atmospheric pressure through a vacuum lock to a high vacuum environment for processing. The maintenance of low operating pressures while water vapor is released from the surfaces of the lock and the article is principally achieved by a separate pumping device operating in the high vacuum enclosure, which device preferably takes the form of a large cryo-panel. The cryo-panel can be electrically isolated from ground to provide a charge collection surface within a Faraday cage for ion implantation processing of the article.

REFERENCES:
patent: 3206598 (1965-09-01), Wegmann
patent: 4000440 (1976-12-01), Hall et al.
patent: 4118630 (1978-10-01), McKenna et al.
patent: 4139774 (1979-02-01), Katagiri
"Model 200-DF5 Ion Implantation System", brochure by Varian Extrion Division, Jan. 1980.
Welch et al., An Introduction to the Elements of Cryopumping, 1979, p. III-1.

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