Semiconductor memory device with improved data reading speed

Static information storage and retrieval – Floating gate – Particular biasing

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Details

365210, 3651852, 365208, G11C 1606, G11C 702

Patent

active

060287918

ABSTRACT:
A semiconductor memory device, arranged to increase the data reading speed, includes a memory cell array having memory cells connected to bit lines and a sense amplifier placed adjacent to the memory cell array for detecting stored data in the memory cells. A bit line control circuit controls writing into the memory cells. A data input/output buffer outputs detected data by the sense amplifier and applies externally applied input write data to the bit line control circuit.

REFERENCES:
patent: 5258958 (1993-11-01), Iwahashi et al.
patent: 5289415 (1994-02-01), DiMarco et al.
patent: 5301149 (1994-04-01), Jinbo
patent: 5321659 (1994-06-01), Taguchi
patent: 5675535 (1997-10-01), Jinbo
patent: 5773997 (1998-06-01), Stiegler

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