Inorganic polysilazane and method of producing the same

Details Inorganic polysilazane and method of producing the same Inorganic polysilazane and method of producing the same

1985-11-26

1989-06-20

Doll, John

Chemistry of inorganic compounds

Silicon or compound thereof

423344, C01B 3300, C01B 21063, C01B 3306

Patent

active

048407780

ABSTRACT:
Novel primarily chain inorganic polysilazanes of average molecular weight of 690 to 2000 are prepared from novel adducts of a halosilane and a base by reacting the adducts with ammonia in unreactive solvents. Silicon nitride is prepared by heating the polysilazanes at 1000.degree. to 1600.degree. C., preferably below 1300.degree. C., most preferably 1000.degree. to 1100.degree. C.

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patent: 4310482 (1982-01-01), Baney
patent: 4387079 (1983-06-01), Kasai et al.
patent: 4397828 (1983-08-01), Seyferth et al.
patent: 4482669 (1984-11-01), Seyferth et al.

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