High voltage semiconductor with integrated low voltage circuitry

Details High voltage semiconductor with integrated low voltage circuitry High voltage semiconductor with integrated low voltage circuitry

1988-06-06

1990-05-29

Salce, Patrick R.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

323272, 323282, G05F 316

Patent

active

049298844

ABSTRACT:
Low voltage semiconductor devices are integrated monolithically with a high voltage semiconductor device on an electrically conductive substrate. The substrate forms an electrode of the high voltage device and is connected in use to the high voltage terminal of a power supply. The low voltage devices operate from a regulated low voltage supply, which is regulated with reference to the high voltage supply voltage, and not with reference to ground. This reduces the need to isolate the low voltage devices from the conductive substrate. An intelligent power switch circuit constructed in accordance with the invention is suitable for use in automotive and lighting applications.

REFERENCES:
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patent: 4366522 (1982-12-01), Baker
patent: 4420700 (1983-12-01), Fay et al.
patent: 4495536 (1985-01-01), Bynum
patent: 4575668 (1986-03-01), Baker
patent: 4747012 (1988-05-01), Maeba et al.
Wrathall, "The Design of a High Power Solid State Automotive Switch in CMOS-DMOS Technology", 6/85, pp. 229-233.
Glogolja et al., "Smart-Sipmos-An Intelligent Power Switch", IEEE Conference Rocord, 3/86, pp. 429-433.
Zollo, "The Boom Starts in Smart Power Products", Electronics, 7/86, pp. 97-101.
"Cars Lead the Drive to Use Smart Power", Power, Special Report, 2/87, pp. 34-35.
O'Leary, "Isolation at the Turning Point", New Electronics, 1/88, pp. 32-38.

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