Non-volatile semiconductor memory

Details Non-volatile semiconductor memory Non-volatile semiconductor memory

1993-06-25

1994-07-19

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257322, 257324, 257325, 257395, 257411, 257530, 257635, 257637, 257638, 257640, H01L 2900, H01L 2934, H01L 2702, H01L 2968

Patent

active

053311817

ABSTRACT:
A non-volatile semiconductor memory providing a semiconductor substrate including source and drain diffusion regions and a gate electrode, and an insulating film which is at least provided on the semiconductor substrate just below the gate electrode and has a smaller dielectric breakdown strength on the source side than on the drain side, wherein the insulating film is comprised of a laminated film having a multilayer structure on the drain side and a single-layer film or multilayer film which is broken down at a smaller voltage on the source side than on the drain side, and a predetermined voltage is applied to break down the single-layer film or multilayer film on the source side, so that data can electrically be written only once.

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patent: 4899205 (1990-02-01), Hamdy et al.
patent: 4996572 (1991-02-01), Tanaka et al.
patent: 5063423 (1991-11-01), Fujii et al.
patent: 5134457 (1992-07-01), Hamdy et al.
patent: 5138410 (1992-08-01), Takebuchi

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