Method of fabricating a phase-shift photomask

Details Method of fabricating a phase-shift photomask Method of fabricating a phase-shift photomask

1996-08-09

1998-05-05

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, G03F 900

Patent

active

057471967

ABSTRACT:
A method of forming a phase-shift photomask that reduces the defect density, manufacture cost, and fabrication processing time. A transparent layer is prepared. Then a light-transmissive thin film and a light-blocking thin film are successively formed over the transparent layer. Using a photoresist mask, a first anisotropic etch is performed on the wafer to remove exposed parts of the light-transmissive thin film and the light-blocking thin film. An isotropic etch is then performed on the photoresist layer so as to uncover a specific width of an edge part of the light-blocking thin film. Using the etched photoresist layer as a mask, a second anisotropic etch is performed on the light-blocking thin film. The photoresist layer is then removed to form the desired phase-shift photomask.

REFERENCES:
patent: 5290647 (1994-03-01), Miyazaki et al.
patent: 5397663 (1995-03-01), Uesawa et al.
patent: 5397664 (1995-03-01), Noelscher et al.
patent: 5591549 (1997-01-01), Yang

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