Method of making high aspect ratio probes with self-aligned cont

Details Method of making high aspect ratio probes with self-aligned cont Method of making high aspect ratio probes with self-aligned cont

1998-08-18

2000-02-22

Bowers, Charles

Semiconductor device manufacturing: process

Electron emitter manufacture

257 10, 313336, H01L 2100

Patent

active

060279516

ABSTRACT:
A high aspect ratio field emission or tunnelling probe is fabricated utilizing a single crystal reactive etching and metallization process. The resulting field emission probes have self-aligned single crystal silicon sharp tips, high aspect ratio supporting posts for the tips, and integrated, self-aligned gate electrodes surrounding an electrically isolated from the tips. The gate electrodes are spaced from the tips by between 200 and 800 nm and metal silicide or metal can be applied on the tips to achieve emitter turn on at low operational gate voltages. The resulting tips have a high aspect ratio for use in probing various surface phenomena, and for this purpose, the probes can be mounted on or integrated in a three-dimensional translator for mechanical scanning across the surface and for focusing by adjusting the height of the emitter above the surface.

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