Method for forming resist mask pattern by light exposure having

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430322, 430326, G03F 900

Patent

active

053308620

ABSTRACT:
A method for forming a resist mask pattern by light exposure providing the steps of forming a resist layer on a semiconductor substrate, forming a phase shifter pattern for inverting a phase of exposed light in an upper portion of the resist layer itself or over the surface of the resist layer, exposing the surface of the semiconductor substrate including the phase shifter pattern, and forming a fine mask pattern below the edge of the phase shifter pattern.

REFERENCES:
patent: 5015559 (1992-01-01), Ogawa
Patent Abstracts of Japan vol. 16, No. 65 (P-1313) Feb. 18, 1992 & JP-A-3 259 257 (Mitsubishi Electric Corp.) Nov. 19, 1991.
Patent Abstracts of Japan vol. 16, No. 19 (P-1300) Jan. 17, 1992 & JP-A-3 237 458 (Mitsubishi Electric Corp.) Oct. 23, 1991.
Patent Abstracts of Japan vol. 5, No. 110 (P-71) Jul. 17, 1981 & JP A-56 051 738 (Oki Electric Inc. Co. Ltd.) May 9, 1981.
Patent Abstracts of Japan vol. 13, No. 268 (E-775) Jun. 20, 1989 & JP-A-1 059 884 (Fujitsu Ltd.) Mar. 7, 1989.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming resist mask pattern by light exposure having does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming resist mask pattern by light exposure having , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming resist mask pattern by light exposure having will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-519167

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.