1988-10-28
1990-03-06
Edlow, Martin H.
357 17, H01L 3112
Patent
active
049070550
ABSTRACT:
An optical semiconductor device of broad area structure comprising an active region positioned between a p-type semiconductor region having a stripe-like anode electrode and an n-type semiconductor region having a cathode electrode, the anode electrode having a broad stripe width in which the photon density is increased to amplify the light with the aid of injected into the active region dependent on the current density flowing between the anode and cathode electrodes, wherein the density distribution of the injected carriers exhibits Gauss distribution in the widthwise direction of the stripe width. Therefore, it is possible to supply such a current as to produce the density distribution of the injected carriers with no excess or shortage.
REFERENCES:
patent: 4787691 (1988-11-01), Lorenzo
Edlow Martin H.
Fuji Photo Film Co. , Ltd.
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