Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

1987-08-27

1990-03-06

James, Andrew J.

357 237, 357 42, H01L 2978

Patent

active

049070533

ABSTRACT:
A semiconductor integrated circuit includes an insulated-gate transistor serving as a driving transistor and composed of source and drain regions of one conductivity type with a high impurity concentration, a channel region disposed between the source and drain regions, an insulating layer covering the substantially entire surface of the channel region except for portions adjacent to the source and drain regions, the insulating layer which covers the channel region having at least a thinner portion, and a gate electrode of a conductive material disposed adjacent to the thinner portion of the insulating layer and having a high diffusion potential with respect to the source region.

REFERENCES:
patent: 3673471 (1972-06-01), Klein
patent: 4016045 (1978-08-01), Nishi
patent: 4385937 (1983-05-01), Ohmura
patent: 4489339 (1984-12-01), Uchida

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