Coating apparatus – Gas or vapor deposition – With treating means
Patent
1999-07-06
2000-02-22
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
118715, 118725, 118729, C23C 1600
Patent
active
06026764&
ABSTRACT:
An improved apparatus for a lower pressure chemical vapor deposition capable of achieving various kinds of thin films having a uniform thickness, preventing parts breakage, achieving automation of the system, and combining the use of a low pressure chemical vapor deposition apparatus and a plasma low pressure chemical vapor deposition apparatus, which includes a deposition base; a reactor disposed on the deposition base and having a reaction region formed therein; a substrate lifted and lowered in the reactor and on which a wafer is placed; a chemical source gas introducer for introducing a chemical source gas into the reactor; a substrate heating member disposed in the substrate for heating the wafer; and a reactor heating member for heating the reactor.
REFERENCES:
patent: 4142004 (1979-02-01), Hauser et al.
patent: 4493977 (1985-01-01), Arai et al.
patent: 4504730 (1985-03-01), Shimizu
patent: 4748135 (1988-05-01), Frijlink
patent: 5160543 (1992-11-01), Ishihara et al.
patent: 5164012 (1992-11-01), Hattori
patent: 5254171 (1993-10-01), Hayakawa et al.
patent: 5329095 (1994-07-01), Okase
patent: 5370371 (1994-12-01), Miyagi et al.
patent: 5536918 (1996-07-01), Ohkase et al.
patent: 5683518 (1997-11-01), Moore et al.
Bueker Richard
Hochberg D. Peter
LandOfFree
Apparatus for low pressure chemical vapor deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus for low pressure chemical vapor deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for low pressure chemical vapor deposition will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-512578