Fishing – trapping – and vermin destroying
Patent
1989-06-21
1990-03-13
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437200, H01L 21285, H01L 2954, H01L 2962
Patent
active
049083317
ABSTRACT:
A method of manufacturing a semiconductor device comprises a semiconductor body (1) having a surface (2), which is adjoined by regions of silicon (3, 4, 5 and 6) and regions of insulating material (8 and 9), the regions of silicon being provided with a top layer (10) of a metal silicide by depositing metal on the surface while heating the semiconductor body to a temperature at which metal silicide is formed during the deposition. According to the invention, cobalt or nickel is deposited while the semiconductor body is heated to a temperature at which cobalt or nickel silicide is formed. Thus, metal silicide does not grow over parts of the regions of insulating material adjoining directly the regions of silicon.
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patent: 4814294 (1989-03-01), West et al.
Gross et al., J. Vac. Sci. Techol., B, 6(5), pp. 1548-1552.
West et al., Appl. Phys. Lett., 53(9)., pp. 740-742.
Gross et al., Proc. Electrochem. Soc., 87-88 (Proc. Int. Conf. Chem. Vapor Deposition, 10th, 1987), pp. 759-765.
Murarka et al., J. Appl. Phys., vol. 56, No. 12 (Dec. 1984), pp. 3404-3412.
Chaudhuri Olik
Miller Paul R.
U.S. Philips Corporation
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