Method of making heterojunction transistors with wide band-gap s

Details Method of making heterojunction transistors with wide band-gap s Method of making heterojunction transistors with wide band-gap s

1988-11-09

1990-03-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG139, 156649, 156662, 357 22, 357 2315, 437 38, 437 39, 437133, 437176, 437203, H01L 21265

Patent

active

049083252

ABSTRACT:
The thickness of a selected layer in an epitaxial heterojunction transistor is initially set to the exact desired value upon its formation, preferably by molecular beam epitaxy, and its thickness is left virtually unaltered during the rest of the fabrication process. Means are provided to prevent alteration of this thickness during subsequent exposure of the selected layer.

REFERENCES:
patent: 3959045 (1976-05-01), Antypas
patent: 4255755 (1981-03-01), Itoh et al.
patent: 4575924 (1986-03-01), Reed et al.
"High Electron Mobility Transistors for LSI Circuits" by T. Mimura, K. Nishiuchi, M. Abe, A. Shibatomi and M. Kobayashi in Proceedings of the International Electron Device Meeting, Dec., 1983, paper 5.1, pp. 99-102.
"Microwave Power GaAs MISFET's With Undoped AlGaAs As An Insulator", by B. Kim, H. Q. Tserng and H. D. Shih in IEEE Electron Device Letters, Vol. EDL-5, No. 11, Nov., 1984, pp. 494-495.
"A New Structure GaAs MESFET With A Selectively Recessed Gate", by Issey Ohta, Tatsuo Otsuki, Masaru Kazumura, Gota Kano, and Iwao Teramoto in IEEE Transactions on Electron Devices, Vol. ED-31, No. 3, March, 1984, pp. 389-390.
R. Fischer et al., "New High-Speed (AlGa)As . . . . ", IEEE Circuits and Dev. Mag., July, 1985, Vol. 85, pp. 35-38.
S. Ghandhi, "VLSI Fabrication Principles", John Wiley & Sons, New York, N.Y. 1983, pp. 281-283.
Hiyamizu et al., "MBE-Grown GaAs/N-AlGaAs . . . ", Jap. J. App. Phys., Vol. 21, Supp. 21-1, pp. 161-168, 1981.
Thorne et al., "Performance of Inverted Structure Modulation", Jap. J. App. Phys., Vol. 21, No. 4, April, 1982, pp. 1223-1224.
H. Lee et al., "High Temperature Annealing of Modulation . . . ", IEEE Elect. Dev. Soc., Vol. 83, Aug. 15, 1983, pp. 204-208.
A. Piotrowska et al., "Ohmic Contacts to III-V . . . ", Solid-State Electr., Vol. 26, No. 3, pp. 179-197, 1983.
M. Laviron, "How Noise . . . . Two-Dimensional Electron Gas . . . . ", Appl. Phys. Lett. 40(6), March 15, 1982, pp. 530-532.
T. Mimura, "High Electron Mobility Transistor", Jpn. J. Appl. Phys. Vol. 20, No. 8, Aug., 1981, pp. L598-L600.
T. Mimura, "A New Field-Effect Transistor with Selectively Doped GaAs
-AlGa.sub.1-x As . . . .", Jpn. J. Appl. Phys. 19(5), May, 1980, pp. 225-227.
L. C. Witkowski, "High Mobilities in Al.sub.x Ga.sub.1-x As-GaAs . . . . ", Appl. Phys. Lett. 37(11), Dec. 1, 1980, pp. 1033-1035.

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