Semiconductor injection lasers

Details Semiconductor injection lasers Semiconductor injection lasers

Filed on

1982-03-29

Date issued

1988-06-14

Examiner

Davie, James W.

Patent Class

Coherent light generators

SubClass

Particular active media

SubSubClass

Semiconductor

Other Related Categories

357 17, 357 52, 372 44, H01S 319

Type

Patent

Status

active

Patent number

047517085

Description

ABSTRACT:
Degradation of the cleaved light output surface of a semiconductor crystal injection laser is reduced through control of surface recombination by providing an annealed optically transparent coating at least one ingredient of which has a higher bandgap than said crystal over the cleaved light output surface. Crystals of GaAs, GaAlAs and GaInAsP are provided with annealed coatings of ZnS, CdS, CdTe and CdSe.

REFERENCES:
patent: 3849738 (1974-11-01), Hakki
patent: 4001719 (1977-01-01), Krupka
patent: 4062035 (1977-12-01), Winstel
patent: 4178564 (1979-12-01), Ladany et al.
patent: 4354198 (1982-10-01), Hodgson et al.
W. Heitmann, "Reactivity Evaporated Films of Scandia and Yittria", Applied Optics, vol. 12, No. 2, Feb. 1973, pp. 394-397.

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