1987-09-15
1990-03-06
James, Andrew J.
357 2, 357 15, 357 45, H01L 2948, H01L 2710
Patent
active
049070401
ABSTRACT:
Disclosed are an active matrix element and a method of manufacturing the same, wherein two first electrode layers are formed on a substrate, semiconductor thin films are formed on regions including the two first electrode layers, respectively, a second electrode layer is formed on the semiconductor thin layers and constituting Schottky barriers between the semiconductor layers and the second electrode layer.
REFERENCES:
patent: 4223308 (1980-09-01), Baraff et al.
patent: 4630893 (1986-12-01), Credelle et al.
patent: 4697331 (1987-10-01), Boulitrop et al.
Szydlo et al., Japan Display 83, 10.6, "Integrated Matrix . . . Diodes", pp. 416-418.
Szydlo et al., Appl. Phys. Lett. 44 (2) Jan. 15, 1984, "New Amorphous . . . Addressing", pp. 205-206.
International Display Research Conference, Society for Information Display, 1983, pp. 416-418 (N. Szydlow, "Integrated Matrix Addressed LCD Using Amorphous Silicon Back to Back Diodes").
Proceedings of the Society for Information Display, Vol. 26, No. 1, 1985, pp. 9-15, New York, S. Togashi et al., "An LC-TV Display Controlled by Amorphous Silicon Diode Rings".
Kobayashi Hiroshi
Menjo Hiroshi
Nishi Shin-ichi
Sato Taxay
Watanabe Hideo
Jackson, Jr. Jerome
James Andrew J.
Konishiroku Photo Industry Co,., Ltd.
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