Method of manufacturing III-V group compound semiconductor

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156614, 437 81, 437126, C30B 2502

Patent

active

053001850

ABSTRACT:
Disclosed is a method of efficiently manufacturing a III-V group compound semiconductor that carbon mixing is reduced, wherein a compound represented by the formula (1) or (2) is used as a V group source: ##STR1## wherein X represents a V group element, n represents integer of 1 to 3, and Y represents electron-releasing group bonded to a position selected from 2-, 4-, and 6-positions, ##STR2## wherein X represents a V group element, m represents an integer of 1 or 2, and Y represents electron-releasing group bonded to a position selected from 2- and 4-positions.

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