High resolution three-dimensional doping profiler

Details High resolution three-dimensional doping profiler High resolution three-dimensional doping profiler

1997-08-22

1999-12-21

Ballato, Josie

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324767, G01R 104, G01R 3126

Patent

active

06005400&

ABSTRACT:
A semiconductor doping profiler provides a Schottky contact at one surface and an ohmic contact at the other. While the two contacts are coupled to a power source, thereby establishing an electrical bias in the semiconductor, a localized light source illuminates the semiconductor to induce a photocurrent. The photocurrent changes in accordance with the doping characteristics of the semiconductor in the illuminated region. By changing the voltage of the power source the depth of the depletion layer can be varied to provide a three dimensional view of the local properties of the semiconductor.

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patent: 4968932 (1990-11-01), Baba et al.
patent: 5519334 (1996-05-01), Dawson
patent: 5659244 (1997-08-01), Sakaguchi
patent: 5708371 (1998-01-01), Koyama
patent: 5770946 (1998-06-01), Patterson

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