Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1995-09-13
1999-12-21
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257185, 257191, 313368, 313542, 313501, H01L 30304, H01J 4006, H01J 3126
Patent
active
060052570
ABSTRACT:
An improved photocathode and image intensifier tube are disclosed along with a method for making both the tube and photocathode. The disclosed photocathode and image intensifier tube have an active layer comprising two or more sublayers. The first sublayer has a first concentration of a group III-V semiconductor compound while the second sublayer has a second concentration of the group III-V semiconductor compound. The multilayer active layer is coupled to a window layer.
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Estrera Joseph P.
Passmore Keith T.
Sinor Timothy W.
Jackson, Jr. Jerome
Litton Systems Inc.
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