Method of manufacturing a semiconductor device for forming a dee

Details Method of manufacturing a semiconductor device for forming a dee Method of manufacturing a semiconductor device for forming a dee

1983-03-16

1985-08-06

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 29580, 29591, H01L 21283, H01L 21265

Patent

active

045326967

ABSTRACT:
This invention provides a method of forming a buried element isolation region in a semiconductor substrate. The method comprises steps of forming a gate electrode material pattern on a gate insulating film formed on a semiconductive substrate, forming a gate electrode by selectively forming a groove in said gate electrode material pattern to thereby isolate said pattern and burying insulating material in the groove.

REFERENCES:
patent: 4391033 (1983-07-01), Shinozaki
patent: 4394196 (1983-07-01), Iwai
patent: 4415371 (1983-11-01), Soclof
patent: 4419813 (1983-12-01), Iwai
patent: 4445967 (1984-05-01), Kameyama

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