Structures including quantum well wires and boxes

Fishing – trapping – and vermin destroying

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437126, 437128, 437247, 437969, 357 16, H01L 21265

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active

047511940

ABSTRACT:
A method of fabricating quantum well wires and boxes is described in which interdiffusion in a semiconductor having a compositional profile is enhanced by the presence of defects created by ion implantation in localized regions.

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Ion Implantation Equipment and Techniques Editors, H. Ryssel et al., Spring-Verlag, pp. 520-531, Rapid Isothermal Annealing for Semiconductor Applications.
Journal of Physics C, Solid State Phys. 19(1986) L67-L71, "Binding Energy of Donor-Phonon System in Quantum Well Wire" by A. Ercelebi et al.
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Compositional Disordering of GaAs-Al.sub.x Ga.sub.1-x AS Superlattice by Ga Focused Ion Beam Implantation and Its Application to Submicron Structure Fabrication; Yoshiro Hirayama, Yoshifumi Suzuki, Seigo Tarucha & Hiroshi Okamoto; Japanese Journal of Applied Physics, vol. 24, No. 7, Jul. 1985, pp. L516-L518.
Scattering Suppression and High-Mobility Effect of size-Quantized Electrons in Ultrafine Semiconductor Wire Structures; Hiroyuki Sakaki; Japanese Journal of Applied Physics, vol. 19, No. 12, Dec. 1980, pp. L735-L738.
The Density of Localized States in Amorphous In.sub.x Se.sub.1-x Thin Films; Hiroyoshi Naito, Masahiro Okuda, Tatsuhiko Matsushita and Tanehiro Nakau; Japanese Journal of Applied Physics, vol. 19, No. 9, Sep. 1980, pp. L513-L516.

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