Low stress tungsten films by silicon reduction of WF.sub.6

Details Low stress tungsten films by silicon reduction of WF.sub.6 Low stress tungsten films by silicon reduction of WF.sub.6

1987-04-30

1988-06-14

Morgenstern, Norman

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427124, 427253, 437228, 437245, 437187, 437173, B05D 306, B05D 512, C23C 1500

Patent

active

047511010

ABSTRACT:
A method is described for depositing thick, low-stress refractory metal films on a substrate. For example, a layer of tungsten of any required thickness may be deposited by the silicon reduction of tungsten hexafluoride in a CVD reactor. This is accomplished by alternating the process step of plasma depositing an amorphous silicon film, with the process step of exposing the silicon film to tungsten hexafluoride until the required thickness of tungsten is reached. The thickness of the deposited amorphous silicon film must be less than the thickness at which the replacement of silicon to tungsten becomes self-limiting to assure that all of the amorphous silicon is replaced. The bombardment of the silicon during plasma deposition "hammers" the underlying tungsten film and relieves the stress in the film.

REFERENCES:
patent: 3697342 (1972-10-01), Cuomo
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patent: 4452828 (1984-06-01), Namba et al.
patent: 4540607 (1985-09-01), Tsao
patent: 4552783 (1985-11-01), Stoll et al.
patent: 4565157 (1986-01-01), Brors et al.
patent: 4584207 (1986-04-01), Wilson

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