Fishing – trapping – and vermin destroying
Patent
1991-10-31
1992-12-01
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 52, 437 60, 437919, H01L 21265, H01L 2170
Patent
active
051680734
ABSTRACT:
A dynamic random access memory (DRAM) storage cell having a storage contact capacitor comprising a tungsten and TiN storage node capacitor plate and the method for fabricating the same. At least a portion of the storage node capacitor plate is formed vertically in the DRAM. The TiN is controllably etched to increase the area of the storage node capacitor plate. An upper poly layer functions as the cell plate and is insulated from the storage node capacitor plate by a dielectric layer.
REFERENCES:
patent: 4974040 (1990-11-01), Taguchi et al.
patent: 5005072 (1991-04-01), Gonzalez
patent: 5006481 (1991-04-01), Chan et al.
patent: 5021357 (1991-06-01), Taguchi et al.
patent: 5049517 (1991-09-01), Liu et al.
patent: 5053351 (1991-10-01), Fatan et al.
patent: 5100825 (1992-03-01), Fatan et al.
IEDM, pp. 592-595, Fijitsu Laboratories Limited 1988 3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAMs.
Gonzalez Fernando
Lee Roger R.
Chaudhuri Olik
Micro)n Technology, Inc.
Trinh Loc Q.
LandOfFree
Method for fabricating storage node capacitor having tungsten an does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating storage node capacitor having tungsten an, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating storage node capacitor having tungsten an will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-503517