Reliability enhancement of aluminum interconnects by reacting al

Details Reliability enhancement of aluminum interconnects by reacting al Reliability enhancement of aluminum interconnects by reacting al

1994-05-27

1995-07-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437195, 437197, 437245, H01L 2144

Patent

active

054321280

ABSTRACT:
This invention encompasses using a strengthened shell to enhance reliability of aluminum leads of a semiconductor device. The invention includes depositing an aluminum layer on a substrate 12, etching the aluminum layer in a predetermined pattern to form aluminum leads 16, exposing the aluminum leads 16 to a strengthening gas to react and form a strengthened shell 18 on the aluminum leads 16, and depositing a dielectric layer 20 over the strengthened shell 18 and the substrate 12. The strengthening gas may contain nitrogen, oxygen, or both. The exposing step may also comprise a rapid thermal anneal, and the dielectric layer 20 is preferably comprised of a material having a dielectric constant of less than 3. An advantage of the invention is to mechanically strengthen the aluminum leads of a semiconductor wafer. In addition, it is an intrinsic operation, rather than extrinsic; the basic material required is already present on the wafer, it is merely altered.

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