Method for preparation of monolithically integrated devices

Details Method for preparation of monolithically integrated devices Method for preparation of monolithically integrated devices

1993-11-16

1995-07-11

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437110, H01L 2120

Patent

active

054321239

ABSTRACT:
A monolithically integrated electroabsorption modulator/optical amplifier is described which is prepared using a lateral bandgap control technique with a planar III-V compund semiconductor substrate. The described device evidences a bandgap shift in excess of 60 nanometers, so indicating its applicability for integration of modulators and lasers or amplifiers. The device is fabricated by atmospheric pressure metal organic condensed vapor deposition growth of gallium indium arsenise/gallium indium aresenide phosphide strained quantum wells on ridges deposited on the substrate.

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C. J. Chang et al., "Integrated External Cavity Quantum Well Laser Array Using Single Epitaxial Growth on a Patterned Substrate" Applied Physics Letters, vol. 56 (5), Jan. 1990, pp. 429-431.
E. Kapon et al., "Molecular Beam Epitaxy of GaAs/AlGaAs Superlattice Heterostructures on Nonplanar Substrates" Applied Physics Letters, vol. 50 (6), Feb. 1987 pp. 347-349.
M. Suzuki et al., "Monolithic Integration of InGaAsP/InP Distributed Feedback Lasers and Electroabsorption Modulator by Vapor Phase Epitaxy" Journal of Lightwave Technology, vol. LT-5, No. 9, Sep. 1987, pp. 1277-1285.

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