Fishing – trapping – and vermin destroying
Patent
1994-10-21
1995-07-11
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437181, 437246, H01L 2186
Patent
active
054321085
ABSTRACT:
A method for fabricating a thin film transistor which includes steps for, forming a first and a second gate electrode on a transparent insulation substrate, forming a gate insulation film on the exposed surface and forming an active layer on a surface of the gate insulation film overlying the first gate electrode, forming a transparent conductive material pattern on a surface of the active layer overlying the first gate electrode and a pixel electrode on the surface of the gate insulation film extending laterally from the surface of the second gate electrode toward the active layer, forming a source electrode over the surfaces of the active layer and a drain electrode which extends from the other side of the transparent conductive material across the active layer to the surface of one side of the pixel leaving space between the source electrode and the drain electrode, an ohmic contact semiconductor layer automatically formed beneath the source electrode and the drain electrode, removing the exposed semiconductor layer pattern on the active layer positioned between the source electrode and the drain electrode and the transparent conductive material pattern positioned beneath the semiconductor layer pattern successively, and forming an element protection insulation film on the entire exposed surface.
REFERENCES:
patent: 5032531 (1991-07-01), Tsutsui et al.
patent: 5047360 (1991-09-01), Nicholas
patent: 5166085 (1992-11-01), Wakai et al.
Goldstar Co. Ltd.
Hearn Brian E.
Trinh Michael
LandOfFree
Method for fabricating a thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating a thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a thin film transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-503133