Detector for the detection of chemical species or photons using

Details Detector for the detection of chemical species or photons using Detector for the detection of chemical species or photons using

1994-01-27

1995-07-11

Warden, Robert J.

Chemical apparatus and process disinfecting, deodorizing, preser

Analyzer, structured indicator, or manipulative laboratory...

Means for analyzing liquid or solid sample

422 98, 422 94, 257253, 257254, 73 2505, 73 3106, H01L 2978

Patent

active

054318831

ABSTRACT:
The invention relates to a detector or sensor for the detection of chemical species or photons. This detector uses a field effect transistor having a semiconducting material substrate (1) in which are defined a source (3) and a drain (5), a gate (9) separated from the substrate by an insulating layer, an external energy source for polarizing the drain, source and gate of the transistor, a film (11), which is conductive or which can be rendered conductive and which is sensitive to the chemical species or photons to be detected, and an ammeter for measuring an electric current variation of the transistor. The arrangement of the film (11) between the connections of the gate (9) and the drain (5) makes it possible to modify the polarization voltage of the transistor gate under the effect of the species to be detected, which is represented by a variation of the current between the drain and the source, when the transistor is correctly polarized.

REFERENCES:
patent: 4658279 (1987-04-01), Guckel
patent: 4698657 (1987-10-01), Watanabe et al.
patent: 4792836 (1988-12-01), Quinlan
patent: 4816888 (1989-03-01), Tanaka et al.
patent: 4849798 (1989-07-01), Watanabe
patent: 4881109 (1989-11-01), Ogawa
patent: 4913792 (1990-04-01), Nagata et al.
"A Hydrogen-Sensitive Pd-Gate MOS Transistor"; Journal of Applied Physics; Lundstrom, K. I. et al.; vol. 46, No. 9, Sep. 1975 pp. 3876-3881.
"Chemically Sensitive Field-Effect Transistor", Biomedical Engineering, Janata et al., Jul. 1976, pp. 241-245.
"Hydrogen, Calcium, and Potassium Ion-Sensitive FET", IEE, Moss et al Jan. 1978, pp. 49-53.

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