Inverse delta-doping for improved open circuit voltage of solar

Details Inverse delta-doping for improved open circuit voltage of solar Inverse delta-doping for improved open circuit voltage of solar

1993-04-19

1994-08-23

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136261, 136262, 257184, 257431, 257463, 257464, H01L 3106

Patent

active

053404084

ABSTRACT:
A solar cell or photo diode has an n-type semiconductor layer and a p-type semiconductor layer which form a pn-junction at the metallurgical interface of the layers. A thin sheet of undoped semiconductor is located at the interface or the lower doped layer. The sheet has less recombination centers than its adjacent regions and prevents cross-doping of donors and acceptors from the n- and p-side by cross-diffusion to increase the open circuit voltage and fill-factor of the solar cells or photo diode.

REFERENCES:
patent: 4524237 (1985-06-01), Ross et al.
patent: 4681983 (1987-07-01), Markvart et al.

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