Fishing – trapping – and vermin destroying
Patent
1989-02-14
1991-03-05
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 51, 437 52, 437191, 437193, 437228, 437233, 437235, H01L 2170
Patent
active
049977814
ABSTRACT:
An array of floating gate memory cells is formed at a face of a semiconductor layer (10). The array includes a plurality of elongate spaced-apart parallel source/drain regions (12). A thick dielectric layer (14) is formed on the face. A plurality of spaced-apart orifices (16) are formed through the thick dielectric layer (14) to the face, each orifice exposing portions of two adjacent source/drain regions (12) and extending therebetween. A plurality of thin first gate insulators (18) are formed on the face in the orifices (16). Next, conductive floating gate electrodes (20) are formed on the orifices (16) and the first gate insulators (18), with the combined thickness of a floating gate electrode (20) and a first gate insulator (18) approximating the thickness of the thick dielectric layer (14). A planarized surface is thus presented for the deposition of an interlevel insulator (22, 24) and a plurality of control gate electrodes (26).
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Chaudhuri Olik
Comfort James T.
Sharp Melvin
Stoltz Richard A.
Texas Instruments Incorporated
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