Capacitive sensor

Measuring and testing – Speed – velocity – or acceleration – Acceleration determination utilizing inertial element

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437180, H01L 2100

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active

054310520

ABSTRACT:
A capacitive sensor has a plurality of mutually insulated metallized silicon wafers or plates, the bond bases of which were treated by etching to create trapezoidally-cross-sectional bonding bases or pads for wire-bonding of the individual silicon plates. The stray capacitance caused by the bond bases is reduced by this step and the value of the stray capacitance becomes exactly reproducible.

REFERENCES:
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patent: 5000817 (1991-03-01), Aine
patent: 5008774 (1991-04-01), Bullis et al.
patent: 5095752 (1992-03-01), Suzuki et al.
patent: 5228341 (1993-07-01), Tsuchitani et al.
Koide et al./Hitachi, Ltd., "A Multi-Step Anisotropic Etching Process for Producing 3-D Silicon Accelerometers", Technical Digest of the 11th Sensor Symposium, Arcadia Ichigaya (Shigaku Kaikan), Tokyo, Jun. 4-5, 1992, The Institute of Electrical Engineers of Japan, pp. 23-26.

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