Thyristor having increased dI/dt stability

Details Thyristor having increased dI/dt stability Thyristor having increased dI/dt stability

1985-08-30

1990-06-05

Clawson, Jr., Joseph E.

357 38, 357 43, 357 86, H01L 2978

Patent

active

049318489

ABSTRACT:
A thyristor has a semiconductor body which comprises an n-emitter provided with a first contact in a first principal surface, a p-base adjacent thereto, a p-emitter provided with a second contact in a second principal surface, and an n-base adjacent to the second principal surface. A high dI/dt stability is achieved since one of the emitters is formed of a plurality of emitter regions, the adjacent base is formed of a plurality of island-shaped base regions, and each of the base regions has a field effect transistor allocated to it via which an ignition current circuit for an emitter region respectively inserted into the base region proceeds. The field effect transistors of all base regions are driven via a common gate terminal for ignition.

REFERENCES:
Thyristor Handbook, A. Hoffmann and K. Stocker, Editors, Verlag Siemens AG, Berlin and Munich, 1965, pp. 27 and 28.
S. Sun et al., "Modeling of the On-Resis . . . ," IEEE Trans. on Elec. Dev., vol. ED-27, #2, Feb. 1980, pp. 356-367.
L. Leipold et al., "A FET-Controlled Thyristor in Sipmos Tech.," Proc. IEEE, 1980 IEDM, pp. 79-82, Dec. 1980.

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