FET and bipolar device and circuit process with maximum junction

Details FET and bipolar device and circuit process with maximum junction FET and bipolar device and circuit process with maximum junction

1972-07-26

1977-12-13

Wojciechowicz, Edward J.

357 22, 357 41, 357 43, 357 52, 357 56, H01L 2712, H01L 2980, H01L 2702, H01L 2906

Patent

active

040632717

ABSTRACT:
Disclosed are improved field-effect and bipolar semiconductor devices and the method of making them, wherein maximum junction control provides highly predictable device parameters. Low temperature epitaxial depositions provide tight junction thickness and resistivity control, and an orientation dependent etch forms grooves circumscribing portions of the host substrate and overlying epitaxial layers to provide dielectrically isolated single crystalline mesas utilized in forming electronic devices.

REFERENCES:
patent: 3404450 (1968-10-01), Karcher
patent: 3409812 (1968-11-01), Zuleeg
patent: 3509433 (1970-04-01), Schroeder
patent: 3648125 (1972-03-01), Peltzer
patent: 3696274 (1972-10-01), Davis

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