Method of manufacturing semiconductor device having trench isola

Details Method of manufacturing semiconductor device having trench isola Method of manufacturing semiconductor device having trench isola

1989-01-30

1990-06-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 67, H01L 2176, H01L 21302

Patent

active

049314092

ABSTRACT:
A method of manufacturing a semiconductor device comprising steps of forming a trench on a semiconductor substrate, forming a first film on the surface of the semiconductor substrate so as to have a large thickness on an upper portion of a side surface of the trench, and to have a small thickness on a bottom portion of the trench, selectively doping an impurity in the bottom portion of the trench through a thin portion of the first film formed on the bottom portion of the trench to form an impurity region on the bottom portion of the trench, removing the first film, and forming a second film having an insulating property on the surface of the semiconductor substrate. A dielectric material or conductive material layer is formed in the trench in which the second film is formed on the inner surface. When the dielectric material or the conductive material layer is formed in the trench, a method of this invention can be applied to formation of trench isolation. When the conductive material layer is formed in the trench, this method can be applied formation of a trench capacitor.

REFERENCES:
patent: 4471525 (1984-09-01), Sasaki
patent: 4493740 (1985-01-01), Komeda
patent: 4519128 (1985-05-01), Chesebro
patent: 4534824 (1985-08-01), Chen
patent: 4660278 (1987-04-01), Teng
patent: 4693781 (1987-09-01), Leung et al.
patent: 4703554 (1987-11-01), Havemann
patent: 4766090 (1988-08-01), Coquin
Solid State Technology, Apr. 1983, pp. 135-139, "Plasma Deposition of Inorganic Films"; A. C. Adams; 1983.

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