Method of producing lateral transistor separated from substrate

Details Method of producing lateral transistor separated from substrate Method of producing lateral transistor separated from substrate

1982-12-16

1984-03-13

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 29578, 29580, 148187, H01L 21265, H01L 21302

Patent

active

044358997

ABSTRACT:
The invention is a transistor or array thereof and method for producing same in sub-micron dimensions on a silicon substrate doped P or N type by forming slots in spaced apart relation across the substrate to define semi-arrays of V shaped intermediate regions which will become a plurality of transistors. Silicon oxide fills these slots and separates the transistor regions from the substrate. Orthogonal slots divide the semi-arrays into individual transistor active regions which are doped by one of N or P doping introduced into each active regions via the orthogonal slots and driven in to comprise the emitter and collector regions on respective sides of original substrate comprising the base regions. Metallization patterns complete electrical connections to the emitter base and collector regions and silicon oxide substantially covers the periphery of each active region for total isolation. Each transistor may further comprise a doped region called P or N doping extending into and across the top of the base region to reduce space region contact resistance and to provide an electron reflecting potential barrier. Each transistor may further comprise a doped skin of either P or N doping to force electrons or holes toward the center of the base region.

REFERENCES:
patent: 3623923 (1971-11-01), Kennedy et al.
patent: 3914857 (1975-10-01), Goser et al.
patent: 4050965 (1977-09-01), Ipri et al.
patent: 4086694 (1978-05-01), U
patent: 4104090 (1978-08-01), Pogge
patent: 4232439 (1980-11-01), Shibata
patent: 4280854 (1981-07-01), Shibata et al.
patent: 4335503 (1982-06-01), Evans, Jr. et al.
Evans et al., "A-1-MM Bipolar VLSI Technology", IEEE Transactions on Electron Devices, vol. ED-27, No. 8, Aug. 1980, pp. 1373-1379.

Affiliated with

Also associated with

Rating

Method of producing lateral transistor separated from substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing lateral transistor separated from substrate , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing lateral transistor separated from substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-485870