Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1986-06-03

1989-03-21

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 46, 357 17, H01S 319

Patent

active

048150827

ABSTRACT:
A semiconductor laser device in which the thickness of an active layer is made smaller than or equal to 0.04 .mu.m only in regions near the laser light emitting facets and the active layer in the other inner region is made to have a sufficient thickness not to cause a conspicuous deterioration in quality of the layer, that is, a thickness larger than 0.04 .mu.m.

REFERENCES:
patent: 4523317 (1985-06-01), Botez
patent: 4674094 (1987-06-01), Murakami
patent: 4768200 (1988-08-01), Isshiki

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