Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1975-04-22

1978-01-24

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, B01J 1700

Patent

active

040695778

ABSTRACT:
A silicon-gate insulated gate field effect transistor device has a thick field oxide in contiguous surrounding relation to its gate electrode and with a surface coplanar with or slightly higher than the surface of the gate electrode, thus facilitating crossovers and contacts to the gate electrode. The method of making this device includes forming a self-aligned silicon gate structure on a silicon wafer, masking the gate structure against the diffusion of oxygen, and thereafter oxidizing the silicon wafer to grow a thick silicon dioxide layer in surrounding relation to the silicon gate structure.

REFERENCES:
patent: 3673471 (1972-06-01), Klein
patent: 3691627 (1972-09-01), Engeler
patent: 3761327 (1973-09-01), Harlow
patent: 3852104 (1974-12-01), Kooi
patent: 3913211 (1975-10-01), Seeds
IBM Tech. Bulletin, "Programmable Read-Only Memory Stack Gate FET", Chin, vol. 14, No. 11, Apr. 1972, p. 3356.

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