Thin film transistor utilizing hydrogenated polycrystalline sili

Details Thin film transistor utilizing hydrogenated polycrystalline sili Thin film transistor utilizing hydrogenated polycrystalline sili

1988-05-25

1989-03-21

James, Andrew J.

357 239, 357 2312, 357 4, 357 59, H01L 2978

Patent

active

048148423

ABSTRACT:
A thin film transistor comprises a substrate, a semiconductor layer comprising a polycrystalline silicon containing 3 atomic % or less of hydrogen provided on said substrate, a source region and a drain region provided in the surface part of said semiconductor layer, an insulating layer provided on said semiconductor layer at the portion between these two regions, a gate electrode provided on said insulating layer, a source electrode forming an electrical contact with the source region and a drain electrode forming an electrical contact with the drain region, the overlapping portions between said gate electrode through the insulating layer beneath said gate electrode and the source region and between said gate electrode through the insulating layer beneath said gate electrode and the drain region begin 2000 .ANG. or less in width.

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