Insulated gate static induction transistor and integrated circui

Details Insulated gate static induction transistor and integrated circui Insulated gate static induction transistor and integrated circui

1985-12-23

1989-03-21

Clawson, Jr., Joseph E.

357 238, 357 2312, 357 41, 357 68, H01L 2978

Patent

active

048148393

ABSTRACT:
An insulated-gate static induction transistor is formed by establishing a potential barrier in a semiconductor region of one conductivity type between the source and the drain regions of the other conductivity type. The height of the potential barrier should be sensitive to the drain voltage as well as to the gate voltage. Therefore, the semiconductor region should have a low impurity concentration and short length. The potential barrier can be established by non-uniformalizing the field effect of the gate voltage in the semiconductor region and/or by the built-in potential between the source region and the semiconductor region.

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