Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1987-06-02

1989-03-21

Edlow, Martin H.

357 60, 357 88, 357 16, H01L 2980

Patent

active

048148385

ABSTRACT:
A semiconductor device in which two sorts of compound semiconductors having unequal lattice constants are joined, is disclosed.
Defects such as dislocations attributed to lattice mismatching are avoided by subjecting one of the compound semiconductors to atomic layer doping with an impurity. Owing to this construction, it is permitted to combine the optimum materials as the compound semiconductors, and the semiconductor device has its performance improved and its design versatility expanded.

REFERENCES:
patent: 3953876 (1976-03-01), Sirtl
patent: 4062038 (1977-12-01), Cuomo
patent: 4632712 (1986-12-01), Fan

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