Method for manufacturing a semiconductor device utilizing select

Details Method for manufacturing a semiconductor device utilizing select Method for manufacturing a semiconductor device utilizing select

1980-03-27

1982-05-18

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 148175, 148187, 148 15, 357 22, 357 23, 357 36, 357 55, 357 20, H01L 2120, H01L 21223, H01L 2980

Patent

active

043297722

ABSTRACT:
Disclosed is an improved method of growing an epitaxial layer preventing auto-doping from a doped region exposed to a surface of a semiconductor substrate. A surface of a semiconductor substrate of one conductivity type is covered with a mask having a predetermined opening. Then, impurity atoms are doped into the substrate through the opening to form a region of the other conductivity type. An epitaxial layer of one conductivity type is deposited over the exposed surface of the substrate with another mask which covers the entire surface of the region and has an area larger than that of the exposed surface of the region. The latter mask prevents auto-doping from the region of the other conductivity type. The process is usable for controlling, for example, channel widths of field effect semiconductor devices uniformly and precisely.

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patent: 4181542 (1980-01-01), Yoshida et al.
Blum et al., "Integrated AlGnAs . . . Memory Cell", IBM Tech. Discl. Bull., vol. 15, No. 2, Jul. 1972, p. 470.

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