High voltage monolithic transistor circuit

Details High voltage monolithic transistor circuit High voltage monolithic transistor circuit

1978-07-03

1979-09-11

Wojciechowicz, Edward J.

357 13, 357 30, 357 51, 357 68, H01L 2702

Patent

active

041677480

ABSTRACT:
Disclosed is a monolithic transistor circuit for high voltage applications. A high impedance bleed resistor is effectively provided across the emitter-base junction of one of the transistors. This is accomplished by placing the base regions of this and another transistor at a selected distance apart so that the zero bias depletion regions of the bases overlap to produce a punch through condition resulting in a desired current density therebetween when an external bias is supplied. The devices thus produced have a high current carrying capacity with low leakage currents.

REFERENCES:
patent: 3177414 (1965-04-01), Kurosawa et al.
patent: 3596150 (1971-07-01), Berthold et al.
patent: 3755722 (1973-08-01), Harland et al.
patent: 3995308 (1976-11-01), Weinstein
patent: 4071852 (1978-01-01), Kannam
patent: 4078244 (1978-03-01), Bonis
patent: 4081817 (1978-03-01), Hara

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