Method and apparatus for measuring minority carrier lifetime in

Details Method and apparatus for measuring minority carrier lifetime in Method and apparatus for measuring minority carrier lifetime in

1984-12-18

1987-04-28

Eisenzopf, Reinhard J.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158R, G01R 3126

Patent

active

046617701

ABSTRACT:
A direct band-gap semiconductor (54) is exposed to intensity-modulated photon radiation (56) having a characteristic energy at least as great as the energy gap of the semiconductor. This produces a time-dependent concentration of excess charge carriers through the material, producing a luminescence signal (58) modulated at the same frequency as the incident radiation but shifted in phase by an amount related to the lifetime of minority carriers. In a preferred embodiment, the phase shift of the luminescence signal is determined by transforming it to a modulated electrical signal and mixing the electrical signal with a reference signal modulated at the same frequency and having a phase which is known relative to the incident radiation. Minority carrier lifetime is calculated by integrating a direct current component of the mixed signal (F.sub.dc) over a 2.pi. range in phase of the reference signal.

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"Two-Chopper Technique for Measuring Fluorescence Lifetimes", by Ingersoll, 1/76, Applied Optics, vol. 15, #1, pp. 61-63.
O. von Roos, J. Appl. Phys. 50, 3738 (1979).
Weiner et al., J. Appl. Phys. 55, 3889 (1984).
O. von Roos, J. Appl. Phys. 54, 1389, 2495 (1983).

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