Virtual ground type nonvolatile semiconductor memory device capa

Details Virtual ground type nonvolatile semiconductor memory device capa Virtual ground type nonvolatile semiconductor memory device capa

1994-08-15

1995-09-05

Fears, Terrell W.

Static information storage and retrieval

Floating gate

Particular biasing

36523001, G11C 1300

Patent

active

054485185

ABSTRACT:
In a virtual ground type nonvolatile semiconductor device including row lines, column lines, and floating-gate type nonvolatile memory cells, each connected between two adjacent column lines and controlled by one of the row lines, during a read mode, one of the row lines is made a high level, and two adjacent column lines are subject to a data read operation. At this time, two column lines each immediately on one side of the two adjacent column lines are made a low level. During a write mode, one of the row lines is made a high level, and two adjacent column lines are made at the low level. At this time, two column lines each immediately on one side of the two adjacent column lines are subject to a write operation.

REFERENCES:
patent: 5218569 (1993-06-01), Banics

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