Semiconductor controlled rectifier having gate grid dividing sur

Details Semiconductor controlled rectifier having gate grid dividing sur Semiconductor controlled rectifier having gate grid dividing sur

1978-04-27

1980-04-15

Clawson, Jr., Joseph E.

357 20, 357 21, 357 38, 357 58, 357 89, H01L 2980

Patent

active

041986458

ABSTRACT:
A semiconductor controlled rectifier comprises a semiconductor substrate consisting of a first layer having a first conductivity type, a second layer having a second conductivity type and disposed adjacent to the first layer, and a plurality of base regions having the first conductivity type and a higher impurity concentration than the second layer and disposed at predetermined distances from one another within the second layer in at least one direction; a pair of electrodes are kept respectively in contact with the surfaces of the first and the second layer; and a control electrode is kept in contact with the respective base regions.

REFERENCES:
patent: 3381189 (1968-04-01), Hinkle et al.
patent: 4132996 (1979-01-01), Baliga

Affiliated with

Also associated with

Rating

Semiconductor controlled rectifier having gate grid dividing sur does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor controlled rectifier having gate grid dividing sur, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor controlled rectifier having gate grid dividing sur will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-478104