Tunnel diode

Details Tunnel diode Tunnel diode

1978-06-09

1980-04-15

Edlow, Martin H.

357 16, 357 3, 357 61, H01L 2988, H01L 29161

Patent

active

041986440

ABSTRACT:
A tunnel diode is disclosed wich includes a heterostructure consisting of a irst layer of GaSb.sub.1-y As.sub.y and a second layer of In.sub.1-x Ga.sub.x As. It is also disclosed that other alloys of Group III and Group V materials can be employed in a tunnel diode of the instant invention.

REFERENCES:
patent: 3626257 (1971-12-01), Esaki
patent: 3626328 (1971-12-01), Esaki
patent: 3864721 (1975-02-01), Cohen
patent: 4088515 (1975-04-01), Blakeslee
patent: 4103312 (1978-07-01), Esaki
patent: 4137542 (1979-01-01), Esaki

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