Method of growing cobalt silicide films by chemical vapor deposi

Details Method of growing cobalt silicide films by chemical vapor deposi Method of growing cobalt silicide films by chemical vapor deposi

1987-07-30

1989-03-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437245, 437184, 4271266, H01L 21285

Patent

active

048142948

ABSTRACT:
This invention relates to an improved method of depositing cobalt silicide films on a substrate by chemical vapor deposition at a temperature range of about 100.degree.-400.degree. C. By employing two separate precursors of, preferably, for cobalt, comprised of cobalt carbonyls having a vapor pressure sufficiently high to provide a cobalt stream to support chemical vapor deposition, and for silicon, comprised of silanes or halogenated silanes having a vapor pressure sufficient to support chemical vapor deposition, a cobalt silicide film is grown. The ratio of silicon to cobalt is controlled precisely by varying the substrate temperature while the process is being conducted. In a more specific aspect, the films are grown on substrates of either gallium arsenide or silicon. In the case of silicon, epitaxial growth of the cobalt silicide film is achieved by specific control of process parameters.

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