Method of manufacturing a semiconductor device

Fishing – trapping – and vermin destroying

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437245, 437246, 156634, 156656, 156664, H01L 21302, H01L 2130, H01L 2102

Patent

active

048142930

ABSTRACT:
The invention relates to the manufacture of a semiconductor device, in which a titanium-tungsten layer (5) must be etched. In order to obtain a homogeneous course of the etching process, according to the invention, the etching is effected in a buffered hydrogen peroxide solution having a pH between 1 and 6.

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