Patent
1990-12-04
1991-12-24
James, Andrew J.
357 52, 357 68, 357 65, H01L 2940
Patent
active
050757547
ABSTRACT:
A semiconductor device comprises a substrate including a p-type first semiconductor region, an n-type second semiconductor region formed in the first semiconductor region, a first insulating layer formed on surfaces of the first semiconductor region and the second semiconductor region, a first conductive layer formed, via the first insulating layer, over the surface of the second semiconductor region, and set at substantially the same potential as that of the second semiconductor region, an n-type third semiconductor region formed to be spaced apart from the second semiconductor region and formed in the first semiconductor region so that a part of the third semiconductor region overlaps a part of the first conductive layer, via the first insulating layer, a second conductive layer connected to the third semiconductor region through an opening formed in the first insulating layer, and a wiring layer formed on a second insulating layer provided on surfaces of the first and second conductive layers.
REFERENCES:
patent: 4567502 (1986-01-01), Nakagawa
patent: 4649414 (1987-03-01), Ueda et al.
Ghandi, "VLSI Fabrication Principles", pp. 28, 435-437.
Kawamura Ken
Shirai Koji
Bowers Courtney A.
James Andrew J.
Kabushiki Kaisha Toshiba
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